Spintronic Device Memristive Effects and Magnetization Switching Optimizing
نویسنده
چکیده
Spintronics, an exploration of spin properties instead of or in addition to charge degrees of freedom, holds promise to continue device miniaturization in the postsilicon era and beyond the age of Moore’s law. The benefits of spintronics come from the fact that there is no need for electric current to retain spin, and there are many paths to change spin without massively moving electrons. CONTENTS
منابع مشابه
Influence of Geometry on the Memristive Behavior of the Domain Wall Spintronic Memristors and Its Applications for Measurement
A memristor is characterized by its electrical memory resistance (memristance), which is a function of the historic profile of the applied current (voltage). This unique ability allows reducing chargeand flux-based measurements to straightforward resistance measurements. The memristive measurement seeks a memristor with a constant modulation of the memristance (memductance) with respect to the ...
متن کاملFast 180° magnetization switching in a strain-mediated multiferroic heterostructure driven by a voltage
Voltage-driven 180° magnetization switching provides a low-power alternative to current-driven magnetization switching widely used in spintronic devices. Here we computationally demonstrate a promising route to achieve voltage-driven in-plane 180° magnetization switching in a strain-mediated multiferroic heterostructure (e.g., a heterostructure consisting of an amorphous, slightly elliptical Co...
متن کاملEinladung Zum Physikalischen Kolloquium
New spintronics devices for GreenIT In our information-everywhere society IT is a major player for energy consumption and novel spintronic devices can play a role in the quest for GreenIT. Reducing power consumption of mobile devices by replacing volatile memory by fast non-volatile spintronic memory could also improve speed and a onememory-fits-all approach drastically simplifies the microelec...
متن کاملThermally induced magnetization switching in Fe/MnAs/GaAs(001): selectable magnetic configurations by temperature and field control
Spintronic devices currently rely on magnetization control by external magnetic fields or spin-polarized currents. Developing temperature-driven magnetization control has potential for achieving enhanced device functionalities. Recently, there has been much interest in thermally induced magnetisation switching (TIMS), where the temperature control of intrinsic material properties drives a deter...
متن کاملSpintronic Nano-Devices for Nonvolatile VLSIs
I review physics and materials science of nanoscale spintronic devices being developed for nonvolatile VLSI [1]. VLSIs can be made high performance and yet standby-power free by using magnetic tunnel junction, a two-terminal spintronic device, in combination with current CMOS technology. The scalability of perpendicular magnetic tunnel junctions utilizing CoFeB-MgO [2] is passing the 20 nm dime...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2015